Concepedia
Applied Surface Science · 1993 · 15 citations · 4 references
Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringElectrical EvaluationNanoelectronicsBias Temperature InstabilityOxide ElectronicsApplied PhysicsHigh-temperature EffectsGate Oxide IntegrityMicroelectronicsBeyond CmosSemiconductor Device
4
A self-aligned cobalt silicide technology using rapid thermal processing
Luc Van den hove, R.A.M. Wolters, Karen Maex et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 101 citations
Materials Science, Engineering, Electronic Materials +10
Ultra Shallow Junction Formation Using Diffusion from Silicides: I . Silicide Formation, Dopant Implantation and Depth Profiling
Han Jiang, C. M. Osburn, Peter Smith et al. · Journal of The Electrochemical Society · 1992 · 52 citations
Boron Profile, Shallow Junctions, Engineering +18
Recrystallization and grain growth phenomena in polycrystalline Si/CoSi2 thin-film couples
S. Nygren, Stefan Johansson · Journal of Applied Physics · 1990 · 43 citations
Materials Science, Semiconductors, Engineering +14
Morphological instabilities of nickel and cobalt silicides on silicon
S. Nygren, D. Caffin, Mikael Östling et al. · Applied Surface Science · 1991 · 38 citations
Materials Science, Materials Engineering, Engineering +6