S. Nygren - Concepedia

Author

S. Nygren

KTH Royal Institute of Technology

Also Known As

S Nygren, S. F. Nygren, S. Nygren, S.F. Nygren, Stefan Nygren

Publications

506

Citations

H-Index

Concepts

All Affiliations

KTH Royal Institute of Technology Uppsala University IBM (United States)Swedish Institute

About

S. Nygren is an author at KTH Royal Institute of Technology specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	13	477
2	Applied Physics	11	13	477
3	Materials Engineering	6	6	312
4	Electrical Engineering	4	4	54
5	Chemistry	2	2	131

S. Nygren

Publications

477

Citations

H-Index

Page 1

	Year	Citations
Enhanced formation of the C54 phase of TiSi2 by an interposed layer of molybdenum A. Mouroux, S.-L. Zhang, Wlodek Kaplan, Applied Physics Letters EngineeringSolid-state ChemistryChemistrySilicon On InsulatorSemiconductor Nanostructures	1996	96
A comparative study of the diffusion barrier properties of TiN and ZrN Mikael Östling, S. Nygren, C. S. Petersson, Thin Solid Films Materials ScienceMaterials EngineeringEngineeringDiffusion ResistancePhysics	1986	90
Properties of GaP Single Crystals Grown by Liquid Encapsulated Pulling S. Nygren, Chris Ringel, H. W. Verleur Journal of The Electrochemical Society Materials ScienceMaterials EngineeringDislocation DensitiesEngineeringCrystalline Defects	1971	48
Recrystallization and grain growth phenomena in polycrystalline Si/CoSi2 thin-film couples S. Nygren, Stefan Johansson Journal of Applied Physics Materials ScienceSemiconductorsEngineeringCrystalline DefectsApplied Physics	1990	43
Morphological instabilities of nickel and cobalt silicides on silicon S. Nygren, D. Caffin, Mikael Östling, Applied Surface Science Materials ScienceMaterials EngineeringEngineeringSurface ScienceApplied Physics	1991	38
Liquid encapsulated Czochralski growth of 35 mm diameter single crystals of GaP S. Nygren Journal of Crystal Growth Materials ScienceSingle CrystalsEngineeringCrystal MaterialCrystal Growth Technology	1973	35
Limitation of Ti/TiN diffusion barrier layers in silicon technology H. Norström, S. Nygren, Per Wiklund, Vacuum EngineeringSilicon TechnologyNanoelectronicsApplied PhysicsSemiconductor Material	1985	31
Reactively sputtered ZrN used as an Al/Si diffusion barrier in a Zr contact to silicon Mikael Östling, S. Nygren, C. S. Petersson, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringSilicon On InsulatorSemiconductorsIon ImplantationZirconium Layer	1984	25
Thermal degradation of TiSi2/poly-Si gate electrodes S. Nygren, Mikael Östling, C. S. Petersson, Thin Solid Films Electrical EngineeringEngineeringBias Temperature InstabilityApplied PhysicsSilicon On Insulator	1989	18
Morphological Instabilities in Bilayers Incorporating Polycristalline Silicon S. Nygren, F. M. d’Heurle Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena Materials ScienceEngineeringSurface ScienceApplied PhysicsSilicene	1992	17

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