Properties of GaP Single Crystals Grown by Liquid Encapsulated Pulling

Abstract

Because it allows the production of substantial quantities of large area, uniformly shaped substrates of , the Liquid Encapsulated Czochralski technique is a major advance in technology. Successful growth of single‐crystal ingots requires maintenance of visibility of the growth interface. This is accomplished by baking out the encapsulant before use, tightly packing the polycrystalline charge into the bottom of the crucible before growth, locating the center of heat at the bottom of the crucible, and keeping the relatively hot during growth. The resulting ingots have uniformly high Hall mobilities, generally being at least as high as those reported for grown by other techniques. The central regions of the ingots have dislocation densities . Effective distribution coefficients for S, Se, Te, and Zn have been found to be , respectively.