Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 101 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsMetal-semiconductor ContactsSelf-assembled NanostructuresSemiconductor Device MaterialsSemiconductor SurfacesSilicon MaterialsSurface PhysicsInterfacial Reaction KineticsPhase SequenceSilicide ContactsSilicon Chemistry
The feasibility of a self-aligned silicide technology based upon cobalt has been investigated. Silicidation reactions were performed by means of rapid thermal processing. Phase sequence, layer morphology, and reaction kinetics were studied by XRD, SEM, RBS, AES, and TEM. Extremely smooth, highly conductive (16 μΩ cm) CoSi2 films were formed by direct reaction of Co on Si, without significant lateral silicide formation at oxide edges. Shallow arsenic junctions were successfully silicided and low contact resistances were obtained on n+ and p+ Si.