R. De Keersmaecker

A self-aligned cobalt silicide technology using rapid thermal processing

Luc Van den hove, R.A.M. Wolters, Karen Maex et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 101 citations

Engineering, Materials Engineering, Materials Science +13

Limitations of TiSi2 as a source for dopant diffusion

V. Probst, H. Schaber, Pierre‐Emmanuel Lippens et al. · Applied Physics Letters · 1988 · 62 citations

Engineering, Materials Engineering, Materials Science +17

Impact of Patterned Layers on Temperature Non-Uniformity during Rapid Thermal Processing for VLSI-Applications

Peter Vandenabeele, Karen Maex, R. De Keersmaecker · MRS Proceedings · 1989 · 42 citations

Engineering, Electrical Engineering, Materials Science +16

Comparison between CoSi2 and TiSi2 as dopant source for shallow silicided junction formation

Luc Van den hove, Karen Maex, L. Hobbs et al. · Applied Surface Science · 1989 · 32 citations

Engineering, Materials Engineering, Materials Science +14

Impact of silicon surface characteristics on MOS device yield for ULSI

Marc Heyns, Claus Martin Hasenack, R. De Keersmaecker et al. · Microelectronic Engineering · 1991 · 23 citations

Engineering, Electrical Engineering, Materials Science +14