Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregation

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Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime

J. Kedzierski, Peng-Yao Xuan, Erik H. Anderson et al. · 2002 · 214 citations

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N-Type Schottky Barrier Source/Drain MOSFET Using Ytterbium Silicide

S. Zhu, Kevin J. Chen, M.-F. Li et al. · IEEE Electron Device Letters · 2004 · 207 citations

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Fermi-level depinning for low-barrier Schottky source/drain transistors

Daniel Connelly, C. Faulkner, P.A. Clifton et al. · Applied Physics Letters · 2006 · 159 citations

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Sub-40 nm PtSi Schottky source/drain metal–oxide–semiconductor field-effect transistors

C. Wang, John P. Snyder, J. R. Tucker · Applied Physics Letters · 1999 · 151 citations

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