IEEE Transactions on Nuclear Science · 2012 · 13 citations · 5 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesBuilt-in Self-testDevice CharacterizationDevice ReliabilitySemiconductor ReliabilityReliability Analysis Of Power ElectronicsSingle Event EffectsWear-out Mechanisms
This paper evaluates protective single event burnout test method on power DMOSFETs to confirm that it provides accurate test results as the destructive test method when performed properly. The selection of resistor values, protective mechanism, and considerations in calculating SEB cross-section are discussed.
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Single-event burnout of power bipolar junction transistors
J.L. Titus, G.H. Johnson, Ronald D. Schrimpf et al. · IEEE Transactions on Nuclear Science · 1991 · 50 citations
Observations of single event failure in power MOSFETs
D. K. Nichols, K.P. McCarty, J.R. Coss et al. · 2005 · 46 citations