Study of high quality GaN grown by OMVPE using an intermediate layer

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Engineering, Materials Engineering, Materials Science +17

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

Tsvetanka Zheleva, Okhyun Nam, M. D. Bremser et al. · Applied Physics Letters · 1997 · 495 citations

Engineering, Materials Engineering, Materials Science +17

Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition

H. Marchand, Xuefei Wu, J. P. Ibbetson et al. · Applied Physics Letters · 1998 · 235 citations

Engineering, Materials Engineering, Materials Science +17

Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

Motoaki Iwaya, Tetsuya Takeuchi, Shigeo Yamaguchi et al. · Japanese Journal of Applied Physics · 1998 · 192 citations

Engineering, Materials Engineering, Materials Science +13

Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth

H. Lahrèche, P. Vennéguès, B. Beaumont et al. · Journal of Crystal Growth · 1999 · 118 citations

Engineering, Materials Engineering, Materials Science +16