Japanese Journal of Applied Physics · 2009 · 10 citations · 11 references
Natural SciencesPhysicsOpticsPhotonicsRadiation MeasurementExposure ControlThin Film LithographyCritical Dimension ControlCritical Dimension MetrologyDeep Ultraviolet LithographyExtreme Ultraviolet LithographyNumerical ApertureOptical LithographyPatternsUltraviolet Light Exposure
The Selete full-field etreme ultraviolet (EUV) exposure tool, the EUV1, was manufactured by Nikon and is being developed at Selete. Its lithographic performance was evaluated in exposure experiments with a static slit using line and space (L&S) patterns, Selete Standard Resist 03 (SSR3), a numerical aperture (NA) of 0.25, and conventional illumination (σ= 0.8). The results showed that 25 nm L&S patterns were resolved. Dynamic exposure experiments showed the resolution to be 45 nm across the exposure field and the critical dimension (CD) uniformity across a shot to be 7 nm, which is sufficient for an alpha-level lithography tool.
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Path to the HVM in EUVL through the development and evaluation of the SFET
Shigeyuki Uzawa, Hiroyoshi Kubo, Yoshinori Miwa et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2007 · 40 citations
Engineering, Electrical Engineering, Manufacturing Engineering +11