C-V characterization of MOS capacitors in SOI structures

Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance

F. Balestra, S. Cristoloveanu, M. Benachir et al. · IEEE Electron Device Letters · 1987 · 750 citations

Engineering, Electrical Engineering, Materials Science +17

Determination of the semiconductor doping profile right up to its surface using the MIS capacitor

K. Ziegler, E. Klausmann, S. Kar · Solid-State Electronics · 1975 · 74 citations

Engineering, Electrical Engineering, Materials Science +12

A CV technique for measuring thin SOI film thickness

J. Chen, R. Solomon, T.Y. Chan et al. · IEEE Electron Device Letters · 1991 · 69 citations

Engineering, Electrical Engineering, Materials Science +17

Threshold voltage and C-V characteristics of SOI MOSFET's related to Si film thickness variation on SIMOX wafers

J. Chen, R. Solomon, T.Y. Chan et al. · IEEE Transactions on Electron Devices · 1992 · 50 citations

Engineering, Electrical Engineering, Microelectronics +16

Computer solution of one-dimensional Poisson's equation

R. W. Klopfenstein, Chih-Wei Wu · IEEE Transactions on Electron Devices · 1975 · 42 citations

Engineering, Computational Engineering, Electrical Engineering +13