GaN junctionless trigate field-effect transistor with deep-submicron gate length: Characterization and modeling in RF regime

GaN-Based RF Power Devices and Amplifiers

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Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

O. Ambacher, B. E. Foutz, J. Smart et al. · Journal of Applied Physics · 2000 · 1.7K citations

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Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

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Wide bandgap compound semiconductors for superior high-voltage unipolar power devices

T. Paul Chow, R. Tyagi · IEEE Transactions on Electron Devices · 1994 · 483 citations

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AlGaN/GaN HEMT With 300-GHz $f_{\max}$

J.W. Chung, W. E. Hoke, Eduardo M. Chumbes et al. · IEEE Electron Device Letters · 2010 · 379 citations · Full text

Engineering, Electrical Engineering, Materials Science +17