High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

S.C. Binari, K. Ikossi, J.A. Roussos et al. · IEEE Transactions on Electron Devices · 2001 · 638 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Defect Donor and Acceptor in GaN

D. C. Look, D. C. Reynolds, J. W. Hemsky et al. · Physical Review Letters · 1997 · 430 citations

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Undoped AlGaN/GaN HEMTs for microwave power amplification

L.F. Eastman, V. Tilak, J. Smart et al. · IEEE Transactions on Electron Devices · 2001 · 389 citations

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AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise

Wu Lu, Jinwei Yang, M.A. Khan et al. · IEEE Transactions on Electron Devices · 2001 · 239 citations

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Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB

S. Keller, Yifeng Wu, Giacinta Parish et al. · IEEE Transactions on Electron Devices · 2001 · 200 citations

Engineering, Electrical Engineering, Materials Science +17