T. N. Fogarty

dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

B. Luo, J. W. Johnson, F. Ren et al. · Applied Physics Letters · 2001 · 117 citations

Engineering, Electrical Engineering, Materials Science +17

High energy proton irradiation effects on SiC Schottky rectifiers

Saurav Nigam, Jihyun Kim, F. Ren et al. · Applied Physics Letters · 2002 · 51 citations

Engineering, Electrical Engineering, Electronic Materials +16

High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors

B. Luo, J. W. Johnson, F. Ren et al. · Journal of Electronic Materials · 2002 · 49 citations

Engineering, Electrical Engineering, Materials Engineering +14

Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors

B. Luo, Jihyun Kim, F. Ren et al. · Applied Physics Letters · 2003 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of high-dose 40MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Rohit Khanna, K. K. Allums, C. R. Abernathy et al. · Applied Physics Letters · 2004 · 32 citations

Engineering, Electrical Engineering, Electronic Materials +16