C. R. Abernathy - Concepedia

Author

C. R. Abernathy

University of Florida

Also Known As

C R Abernathy, C. R. ABERNATHY, C. R. Abernathy, C.R. Abernathy

102

Publications

2.1K

Citations

H-Index

Concepts

All Affiliations

University of Florida AT&T (United States)United States Army Research Office Triangle Sandia National Laboratories

About

C. R. Abernathy is an author at University of Florida specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	26	44	2K
2	Applied Physics	26	43	2K
3	Chemistry	9	9	462
4	Natural Sciences	8	8	482
5	Chemical Engineering	3	3	84

C. R. Abernathy

Publications

Citations

H-Index

Page 1

	Year	Citations
Unconventional Carrier-Mediated Ferromagnetism above Room Temperature in Ion-Implanted (Ga, Mn)P:C Nikoleta Theodoropoulou, A. F. Hebard, M. E. Overberg, Physical Review Letters EngineeringMagnetic ResonanceMn DoseSpintronic MaterialMagnetoresistance	2002	223
Wide bandgap GaN-based semiconductors for spintronics S. J. Pearton, C. R. Abernathy, G T Thaler, Journal of Physics Condensed Matter Wide-bandgap SemiconductorEngineeringMagnetic ResonanceSpintronic MaterialSemiconductors	2004	137
Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes B. S. Kang, S. Kim, F. Ren, Applied Physics Letters Pressure-induced ChangesMembrane StructureElectrical EngineeringElectronic DevicesEngineering	2004	116
AlGaN/GaN-based metal–oxide–semiconductor diode-based hydrogen gas sensor B. S. Kang, F. Ren, C. R. Abernathy, Applied Physics Letters Forward GateElectrical EngineeringEngineeringSensorsNanoelectronics	2004	95
Indication of hysteresis in AlMnN R. M. Frazier, G. T. Thaler, M. E. Overberg, Applied Physics Letters Aluminium NitrideRoom Temperature MagnetizationEngineeringCrystal Growth TechnologyMagnetoresistance	2003	93
Patterning of AlN, InN, and GaN in KOH-based solutions Jeffrey Mileham, S. J. Pearton, C. R. Abernathy, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Mathematical ProgrammingSemiconductorsMaterials ScienceSemiconductor TechnologyEngineering	1996	89
Growth of III–V materials by metalorganic molecular-beam epitaxy C. R. Abernathy Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceMaterials EngineeringDopant SourcesMolecular-beam EpitaxyEngineering	1993	87
Hydrogenation of GaN, AlN, and InN J. M. Zavada, R. G. Wilson, C. R. Abernathy, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringAluminium NitridePlasma Exposure	1994	75
Properties of Mn-doped Cu2O semiconducting thin films grown by pulsed-laser deposition M. Ivill, M. E. Overberg, C. R. Abernathy, Solid-State Electronics Materials ScienceEngineeringPulsed-laser DepositionApplied PhysicsMn-doped Cu2o	2003	72
Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy R. M. Frazier, G. T. Thaler, J. Y. Leifer, Applied Physics Letters Aluminium NitrideMagnetic PropertiesEngineeringCrystal Growth TechnologyMagnetic Resonance	2005	65

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