C. R. Abernathy

Unconventional Carrier-Mediated Ferromagnetism above Room Temperature in Ion-Implanted (Ga, Mn)P:C

Nikoleta Theodoropoulou, A. F. Hebard, M. E. Overberg et al. · Physical Review Letters · 2002 · 223 citations · Full text

Engineering, Magnetic Resonance, Mn Dose +16

Wide bandgap GaN-based semiconductors for spintronics

S. J. Pearton, C. R. Abernathy, G T Thaler et al. · Journal of Physics Condensed Matter · 2004 · 137 citations

Wide-bandgap Semiconductor, Engineering, Magnetic Resonance +17

Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes

B. S. Kang, S. Kim, F. Ren et al. · Applied Physics Letters · 2004 · 116 citations

Pressure-induced Changes, Membrane Structure, Electrical Engineering +13

AlGaN/GaN-based metal–oxide–semiconductor diode-based hydrogen gas sensor

B. S. Kang, F. Ren, C. R. Abernathy et al. · Applied Physics Letters · 2004 · 95 citations

Forward Gate, Electrical Engineering, Engineering +11

Indication of hysteresis in AlMnN

R. M. Frazier, G. T. Thaler, M. E. Overberg et al. · Applied Physics Letters · 2003 · 93 citations

Aluminium Nitride, Room Temperature Magnetization, Engineering +16