R. Wilkins - Concepedia

Author

R. Wilkins

Also Known As

D. Wilkins, R Wilkins, R. Wilkins, R.T. Wilkins, Richard T. Wilkins, Richard Wilkins, Robert A. E. Wilkins, Wilkins, Richard

130

Publications

2.1K

Citations

H-Index

Concepts

All Affiliations

Prairie View A&M University University of Florida CoolCad Electronics (United States)Langley Research Center Johnson Space Center

About

R. Wilkins is an author at Prairie View A&M University specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	36	1.7K
2	Natural Sciences	7	7	222
3	Medicine	2	2	31
4	Education	1	1	13
5	Health Sciences	1	1	44

R. Wilkins

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
Analytic solution for the current-voltage characteristic of two mesoscopic tunnel junctions coupled in series M. Amman, R. Wilkins, Eshel Ben‐Jacob, Physical review. B, Condensed matter Theoretical AnalysisElectrical EngineeringAnalytic SolutionEngineeringPhysics	1991	238
Scanning-tunneling-microscope observations of Coulomb blockade and oxide polarization in small metal droplets R. Wilkins, Eshel Ben‐Jacob, R. C. Jaklevic Physical Review Letters EngineeringMicroscopyCoulomb BlockadeCharge TransportSemiconductor Device	1989	225
The Energy Dependence of Proton-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors Xiao Hu, B.K. Choï, Hugh Barnaby, IEEE Transactions on Nuclear Science Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringProton-induced Degradation	2004	137
dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors B. Luo, J. W. Johnson, F. Ren, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2001	116
Single Event Effects in Si and SiC Power MOSFETs Due to Terrestrial Neutrons Akin Akturk, R. Wilkins, J.M. McGarrity, IEEE Transactions on Nuclear Science EngineeringTerrestrial NeutronsSic Power MosfetsSemiconductor DeviceReliability Engineering	2016	100
Geometry and electronic structure of the arsenic vacancy on GaAs(110) G. Lengel, R. Wilkins, Geoffrey W. Brown, Physical Review Letters Ii-vi SemiconductorQuantum ScienceDefect LevelsEngineeringTunneling Microscopy	1994	96
Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and Diodes Akin Akturk, J.M. McGarrity, Neil Goldsman, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringPower DeviceBias Temperature InstabilityFast Thermal Transients	2018	57
Tunneling microscopy of point defects on GaAs(110) G. Lengel, R. Wilkins, Geoffrey W. Brown, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena SemiconductorsMaterials ScienceIi-vi SemiconductorGallium SitesPoint Defects	1993	54
High energy proton irradiation effects on SiC Schottky rectifiers Saurav Nigam, Jihyun Kim, F. Ren, Applied Physics Letters Electrical EngineeringSemiconductor DeviceEngineeringHigh Voltage EngineeringMev Protons	2002	50
Global real-time dose measurements using the Automated Radiation Measurements for Aerospace Safety (ARMAS) system W. Kent Tobiska, Dave Bouwer, D. Smart, Space Weather	2016	49

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