Single Event Effects in Si and SiC Power MOSFETs Due to Terrestrial Neutrons

Abstract

Experimental investigation of neutron induced single event failures and the associated device cross sections as well as low altitude failure-in-time (FIT) curves in silicon (Si) and silicon carbide (SiC) power MOSFETs at room temperature are reported along with possible explanation of failure mechanisms in SiC devices. Neutrons are found to give rise to significantly fewer failures in SiC power MOSFETs compared to their Si equivalents; however, SiC power MOSFETs do exhibit catastrophic failures when exposed to neutrons that simulate the terrestrial spectrum.