A. M. Dabiran

Mg Zn O ∕ Al Ga N heterostructure light-emitting diodes

A. Osinsky, J. W. Dong, M. Z. Kauser et al. · Applied Physics Letters · 2004 · 163 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Electrical detection of immobilized proteins with ungated AlGaN∕GaN high-electron-mobility Transistors

B. S. Kang, F. Ren, Lin Wang et al. · Applied Physics Letters · 2005 · 128 citations

Engineering, Bioengineering, Biotechnology +17

dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

B. Luo, J. W. Johnson, F. Ren et al. · Applied Physics Letters · 2001 · 117 citations

Engineering, Electrical Engineering, Materials Science +17

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

A. M. Dabiran, A. M. Wowchak, A. Osinsky et al. · Applied Physics Letters · 2008 · 97 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of Co60 γ-rays on dc performance of AlGaN/GaN high electron mobility transistors

B. Luo, J. W. Johnson, F. Ren et al. · Applied Physics Letters · 2002 · 86 citations

Engineering, Electrical Engineering, Materials Engineering +17