A. M. Wowchak

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

A. M. Dabiran, A. M. Wowchak, A. Osinsky et al. · Applied Physics Letters · 2008 · 97 citations

Engineering, Electrical Engineering, Materials Science +17

Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

Jingbi You, X. W. Zhang, S. G. Zhang et al. · Applied Physics Letters · 2010 · 82 citations

Engineering, Materials Engineering, Materials Science +16

Development of enhancement mode AlN/GaN high electron mobility transistors

Chin‐Wei Chang, S. J. Pearton, C. F. Lo et al. · Applied Physics Letters · 2009 · 57 citations

Engineering, Electrical Engineering, Materials Science +17

Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov et al. · Applied Physics Letters · 2007 · 55 citations

Engineering, Electrical Engineering, Materials Science +17

GaN growth by a controllable RF-excited nitrogen source

J. M. Van Hove, G. J. Cosimini, Erik Nelson et al. · Journal of Crystal Growth · 1995 · 45 citations

Engineering, Materials Engineering, Materials Science +8