Recent advances and current challenges in the search for high mobility band-edge high-k/metal gate stacks

Design of ion-implanted MOSFET's with very small physical dimensions

R.H. Dennard, F.H. Gaensslen, Hwa-Nien Yu et al. · IEEE Journal of Solid-State Circuits · 1974 · 3.5K citations

Engineering, Electrical Engineering, Microelectronics +16

High-<tex>$kappa$</tex>/Metal–Gate Stack and Its MOSFET Characteristics

R. Chau, Suman Datta, M. Doczy et al. · IEEE Electron Device Letters · 2004 · 468 citations

Engineering, Electrical Engineering, Materials Science +17

Silicon CMOS devices beyond scaling

Wilfried Haensch, E. Nowak, R.H. Dennard et al. · IBM Journal of Research and Development · 2006 · 455 citations

Engineering, Computer Engineering, Electrical Engineering +17

Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges

E. P. Gusev, Vijay Narayanan, Martin M. Frank · IBM Journal of Research and Development · 2006 · 272 citations

Engineering, Electrical Engineering, Materials Science +17

Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility

P. D. Kirsch, Manuel Quevedo-López, H. -J. Li et al. · Journal of Applied Physics · 2006 · 118 citations

Natural Sciences, Materials Engineering, Materials Science +17