2012 · 17 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsSemiconductor Thin FilmsEquivalent Oxide ThicknessHeterojunction DevicesHeterostructure DevicesHeterostructure Field-effect TransistorsHeterostructure TransistorsSub-threshold OperationThreshold VoltageTunneling Field-effect Transistors
We fabricated a vertical tunnel field-effect transistor (TFET) with a GaAsSb/InGaAs heterojunction using a 5-nm-thick Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> dielectric. The 26-nm width of the narrow channel mesa structure was confirmed using citric acid solution. The minimum sub-threshold slope (SS) was 71 mV/dec. On the basis of our simulated and experimental results, the SS was estimated to be 54 mV/dec for an effective oxide thickness (EOT) of 1 nm.
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Tunneling in a finite superlattice
Raphael Tsu, L. Esaki · Applied Physics Letters · 1973 · 2.4K citations
Low-subthreshold-swing tunnel transistors
Qin Zhang, Wei Zhao, Alan Seabaugh · IEEE Electron Device Letters · 2006 · 652 citations
Ryo Suzuki, Noriyuki Taoka, Masafumi Yokoyama et al. · Applied Physics Letters · 2012 · 164 citations