Andrew D. Carter

Al$_{2}$O$_{3}$ Growth on (100) In$_{0.53}$Ga$_{0.47}$As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures

Andrew D. Carter, William J. Mitchell, B.J. Thibeault et al. · Applied Physics Express · 2011 · 49 citations

Aluminium Nitride, Engineering, Plasma Processing +17

Influence of gate metallization processes on the electrical characteristics of high-k/In0.53Ga0.47As interfaces

Greg J. Burek, Yoontae Hwang, Andrew D. Carter et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2011 · 38 citations

Materials Science, Electrical Characteristics, Electrical Engineering +15

GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas

K. Shinohara, Casey King, Andrew D. Carter et al. · IEEE Electron Device Letters · 2018 · 36 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Do <scp>SE_II</scp> Electrons Really Degrade <scp>SEM</scp> Image Quality?

Gary H. Bernstein, Andrew D. Carter, David C. Joy · Scanning · 2012 · 12 citations

Si/InP Heterogeneous Integration Techniques from the Wafer-Scale (Hybrid Wafer Bonding) to the Discrete Transistor (Micro-Transfer Printing)

Andrew D. Carter, Miguel Urteaga, Zachary Griffith et al. · 2018 · 11 citations

Engineering, Device Integration, Micro-transfer Printing +21