Greg J. Burek

$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

Uttam Singisetti, Mark A. Wistey, Greg J. Burek et al. · IEEE Electron Device Letters · 2009 · 85 citations

Sub Xmlns, Engineering, Physics +5

Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs

Ashish Baraskar, Mark A. Wistey, Vibhor Jain et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009 · 52 citations

Wide-bandgap Semiconductor, Situ Ohmic Contacts, Engineering +16

Influence of gate metallization processes on the electrical characteristics of high-k/In0.53Ga0.47As interfaces

Greg J. Burek, Yoontae Hwang, Andrew D. Carter et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2011 · 38 citations

Materials Science, Electrical Characteristics, Electrical Engineering +15

<i>Ex situ</i> Ohmic contacts to n-InGaAs

Ashish Baraskar, Mark A. Wistey, Vibhor Jain et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2010 · 27 citations

Materials Science, Surface Characterization, Electrical Engineering +15

Frequency Limits of InP-based Integrated Circuits

M.J.W. Rodwell, Erik Lind, Zach Griffith et al. · 2007 · 19 citations

Engineering, Frequency Limits, Thz Cutoff Frequencies +16