Ashish Baraskar

$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

Uttam Singisetti, Mark A. Wistey, Greg J. Burek et al. · IEEE Electron Device Letters · 2009 · 85 citations

Sub Xmlns, Engineering, Physics +5

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

Zhen Zhang, Siyuranga O. Koswatta, Stephen W. Bedell et al. · IEEE Electron Device Letters · 2013 · 53 citations

Low-power Electronics, Materials Science, Electrical Engineering +13

Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs

Ashish Baraskar, Mark A. Wistey, Vibhor Jain et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009 · 52 citations

Wide-bandgap Semiconductor, Situ Ohmic Contacts, Engineering +16

Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data

Ashish Baraskar, A. C. Gossard, M.J.W. Rodwell · Journal of Applied Physics · 2013 · 44 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Device +18

Effect of growth temperature on the magnetic, microwave, and cation inversion properties on NiFe2O4 thin films deposited by pulsed laser ablation deposition

C. N. Chinnasamy, S. D. Yoon, Aria Yang et al. · Journal of Applied Physics · 2007 · 42 citations

Magnetic Properties, Engineering, Magnetic Resonance +20