Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

Abstract

Contact resistances are directly measured for contacts with sizes from 25 to 330 nm using e-beam based nano-TLM devices. Record low contact resistivities <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\sim}1.5\times 10^{-9}~\Omega\cdot~{\rm cm}^{2}$</tex></formula> are extracted from Ni(Pt) silicide contacts on in situ boron-doped <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\rm Si}_{0.7}{\rm Ge}_{0.3}$</tex></formula> with a chemical boron-doping density of <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$2\times 10^{21}/{\rm cm}^{3}$</tex></formula> . This is very promising for pMOS applications beyond the 10-nm node. A clear dependence of contact resistance on the silicide thickness has also been found.