A. Pyzyna

Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond

Sarunya Bangsaruntip, Karthik Balakrishnan, S.-L. Cheng et al. · 2013 · 97 citations

Engineering, Electrical Engineering, Microelectronics +16

FinFET performance advantage at 22nm: An AC perspective

Michael Guillorn, Josephine Chang, A. Bryant et al. · 2008 · 83 citations

Engineering, Electrical Engineering, Microelectronics +15

Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

Zhen Zhang, F. Pagette, C. D'Emic et al. · IEEE Electron Device Letters · 2010 · 59 citations

Engineering, Electrical Engineering, Materials Science +17

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

Zhen Zhang, Siyuranga O. Koswatta, Stephen W. Bedell et al. · IEEE Electron Device Letters · 2013 · 54 citations

Engineering, Electrical Engineering, Materials Science +16

Resistivity of copper interconnects beyond the 7 nm node

A. Pyzyna, Robert L. Bruce, Hsinyu Tsai et al. · 2015 · 32 citations

Engineering, Electrical Engineering, Materials Science +17