Uttam Singisetti

Publications

4.1K

Citations

H-Index

2007

Active since

Affiliations

University at Buffalo, State University of New York(Current)

University of California, Santa Barbara

The Ohio State University

University of Nebraska–Lincoln

Intel (United States)

Uttam Singisetti is an author at University at Buffalo, State University of New York specializing in applied physics, engineering, and electrical engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringMaterial SciencePhysicsMicroelectronicsSemiconductorsCondensed Matter PhysicsNanoelectronicsQuantum Materials

Publications per year

2007–2025

Publications

β-Gallium oxide power electronics

Andrew J. Green, James S. Speck, Grace Xing et al. · APL Materials · 2022 · 462 citations · Full text

Wide-bandgap Semiconductor, Engineering, Power Electronic Systems +17

Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

Munho Kim, Jung‐Hun Seo, Uttam Singisetti et al. · Journal of Materials Chemistry C · 2017 · 268 citations

Wide-bandgap Semiconductor, Membrane Structure, Versatile Usage +19

Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage

Shivam Sharma, Ke Zeng, Sudipto Saha et al. · IEEE Electron Device Letters · 2020 · 223 citations

Device Modeling, Electrical Engineering, Electronic Devices +14

N-polar GaN epitaxy and high electron mobility transistors

Man Hoi Wong, S. Keller, Sansaptak Dasgupta Nidhi et al. · Semiconductor Science and Technology · 2013 · 222 citations

1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs

Ke Zeng, Abhishek Vaidya, Uttam Singisetti · IEEE Electron Device Letters · 2018 · 217 citations

Materials Science, Electrical Engineering, Engineering +11

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