S. Mookerjea

Temperature-Dependent $I$– $V$ Characteristics of a Vertical $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Tunnel FET

S. Mookerjea, D. K. Mohata, Theresa S. Mayer et al. · IEEE Electron Device Letters · 2010 · 224 citations

Engineering, Electrical Engineering, Materials Science +13

On Enhanced Miller Capacitance Effect in Interband Tunnel Transistors

S. Mookerjea, R. Krishnan, Suman Datta et al. · IEEE Electron Device Letters · 2009 · 224 citations

Engineering, Electrical Engineering, Materials Science +16

Effective Capacitance and Drive Current for Tunnel FET (TFET) CV/I Estimation

S. Mookerjea, Ramakrishnan Krishnan, Suman Datta et al. · IEEE Transactions on Electron Devices · 2009 · 222 citations

Engineering, Electrical Engineering, Circuit Theory +14

Experimental demonstration of 100nm channel length In<inf>0.53</inf>Ga<inf>0.47</inf>As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications

S. Mookerjea, D. K. Mohata, R. Krishnan et al. · 2009 · 122 citations

Engineering, Computer Engineering, Electrical Engineering +11

Experimental Staggered-Source and N+ Pocket-Doped Channel III–V Tunnel Field-Effect Transistors and Their Scalabilities

D. K. Mohata, S. Mookerjea, Ashish Agrawal et al. · Applied Physics Express · 2011 · 104 citations

Engineering, Electrical Engineering, Materials Engineering +15