IEEE Electron Device Letters · 2009 · 224 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyField-effect TransistorsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBandgap EngineeringCapacitance ReductionDigital Logic CircuitsDual-gate Field-effect TransistorsIndium Gallium ArsenideLarge-signal BehaviorTunneling Field-effect Transistors
We compare the transient response of double-gate thin-body-silicon interband tunnel field-effect transistor (TFET) with its metal-oxide-semiconductor field-effect transistor counterpart. Due to the presence of source side tunneling barrier, the silicon TFETs exhibit enhanced Miller capacitance, resulting in large voltage overshoot/undershoot in its large-signal switching characteristics. This adversely impacts the performance of Si TFETs for digital logic applications. It is shown that TFETs based on lower bandgap and lower density of states materials like indium arsenide show significant improvement in switching behavior due to its lower capacitance and higher ON current at reduced voltages.
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Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors
Joerg Appenzeller, Yu-Ming Lin, Joachim Knoch et al. · Physical Review Letters · 2004 · 880 citations