High breakdown M–I–M structures on bulk AlN

GaN: Processing, defects, and devices

S. J. Pearton, J.C. Zolper, R. J. Shul et al. · Journal of Applied Physics · 1999 · 1.8K citations

Engineering, Materials Engineering, Materials Science +17

Fabrication and performance of GaN electronic devices

S. J. Pearton, F. Ren, A.P. Zhang et al. · Materials Science and Engineering R Reports · 2000 · 498 citations

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High voltage (450 V) GaN Schottky rectifiers

Zvonimir Bandić, P. M. Bridger, E. C. Piquette et al. · Applied Physics Letters · 1999 · 153 citations

Engineering, Electrical Engineering, Materials Science +17

Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage

A. P. Zhang, J. W. Johnson, F. Ren et al. · Applied Physics Letters · 2001 · 93 citations

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Comparison of GaN p-i-n and Schottky rectifier performance

Alan Zhan, G. Dang, F. Ren et al. · IEEE Transactions on Electron Devices · 2001 · 74 citations

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