Comparison of GaN p-i-n and Schottky rectifier performance

Abstract

The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for the Schottky diodes) and forward turn-on voltage (/spl sim/5 V for the p-i-n diodes; /spl sim/3.5 V for the Schottky diodes). Both types of device showed a negative temperature coefficient for reverse breakdown, with value -0.34/spl plusmn/0.05 V/spl middot/K/sup -1/.