Tzer‐En Nee

GaN electronics for high power, high temperature applications

S. J. Pearton, F. Ren, A.P. Zhang et al. · Materials Science and Engineering B · 2001 · 102 citations

Electrical Engineering, Engineering, Applied Physics +3

Gd 2 O 3 / GaN metal-oxide-semiconductor field-effect transistor

J. W. Johnson, B. Luo, F. Ren et al. · Applied Physics Letters · 2000 · 97 citations

Wide-bandgap Semiconductor, Electrical Engineering, Elemental Gd +7

Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots

Wen‐Hao Chang, T. M. Hsu, Chun‐Che Huang et al. · Physical review. B, Condensed matter · 2000 · 89 citations

Photoluminescence, Engineering, Photocurrent Studies +11

Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures

N. T. Yeh, Tzer‐En Nee, J.‐I. Chyi et al. · Applied Physics Letters · 2000 · 78 citations

Optical Materials, Engineering, Strain-induced Wavelength Shift +22

Comparison of GaN p-i-n and Schottky rectifier performance

Alan Zhan, G. Dang, F. Ren et al. · IEEE Transactions on Electron Devices · 2001 · 74 citations

Electrical Engineering, Engineering, Power Device +13