J.‐I. Chyi - Concepedia

Author

J.‐I. Chyi

Also Known As

J. -I. Chyi, J. I. Chyi, J.-I Chyi, J.-I. Chyi, J.I Chyi, J.I. Chyi, J.‐I. Chyi, Jen Inn Chyi, Jen- Inn Chyi, Jen-Inn Chyi

122

Publications

1.6K

Citations

H-Index

Concepts

All Affiliations

National Central University University of Florida National Taiwan University National Synchrotron Radiation Research Center National Tsing Hua University

About

J.‐I. Chyi is an author at National Central University specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	39	1.4K
2	Applied Physics	21	39	1.4K
3	Electrical Engineering	15	23	695
4	Natural Sciences	2	2	57
5	Chemistry	2	2	59

J.‐I. Chyi

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors B. S. Kang, S. Kim, J. Kim, Applied Physics Letters Materials ScienceTensile StrainElectrical EngineeringSemiconductor TechnologyPlanar Devices	2003	111
Growth of InSb and InAs1−<i>x</i>Sb<i>x</i> on GaAs by molecular beam epitaxy J.‐I. Chyi, Ş. Kalem, N. S. Kumar, Applied Physics Letters SemiconductorsMaterials ScienceElectronic DevicesEngineeringPhysics	1988	110
Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots Wen‐Hao Chang, T. M. Hsu, Chun‐Che Huang, Physical review. B, Condensed matter PhotoluminescenceEngineeringPhotocurrent StudiesPhysicsHole Escape	2000	89
Hole emission processes in InAs/GaAs self-assembled quantum dots Wen‐Hao Chang, W. Y. Chen, T. M. Hsu, Physical review. B, Condensed matter Electrical EngineeringHole Emission ProcessEngineeringTunneling MicroscopyPhysics	2002	86
Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing T. M. Hsu, Yuemei Lan, Wen‐Hao Chang, Applied Physics Letters Optical MaterialsEngineeringColloidal NanocrystalsOptoelectronic DevicesSemiconductor Nanostructures	2000	82
Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures N. T. Yeh, Tzer‐En Nee, J.‐I. Chyi, Applied Physics Letters Optical MaterialsEngineeringStrain-induced Wavelength ShiftOptoelectronic DevicesSemiconductor Nanostructures	2000	78
Material properties of compositional graded In<i>x</i>Ga1−<i>x</i>As and In<i>x</i>Al1−<i>x</i>As epilayers grown on GaAs substrates J.‐I. Chyi, J.-L. Shieh, Jun–Yi Pan, Journal of Applied Physics Materials ScienceMaterial PropertiesEngineeringGaas SubstratesCrystal Growth Technology	1996	64
Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy C. Y. Lai, T. M. Hsu, Wen‐Hao Chang, Journal of Applied Physics Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringPiezoelectric FieldSemiconductors	2002	61
Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells Chang‐Cheng Chuo, C.-M. Lee, Tzer‐En Nee, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringStructural PropertiesPostgrowth Thermal Annealing	2000	56
Theoretical study of the temperature dependence of 1.3-μm AlGaInAs-InP multiple-quantum-well lasers Jen-Wei Pan, J.‐I. Chyi IEEE Journal of Quantum Electronics PhotonicsLeakage Current DensityTheoretical StudyEngineeringPhysics	1996	51

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