J.‐I. Chyi

Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

B. S. Kang, S. Kim, J. Kim et al. · Applied Physics Letters · 2003 · 111 citations

Materials Science, Tensile Strain, Electrical Engineering +10

Growth of InSb and InAs1−<i>x</i>Sb<i>x</i> on GaAs by molecular beam epitaxy

J.‐I. Chyi, Ş. Kalem, N. S. Kumar et al. · Applied Physics Letters · 1988 · 110 citations

Semiconductors, Materials Science, Electronic Devices +13

Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots

Wen‐Hao Chang, T. M. Hsu, Chun‐Che Huang et al. · Physical review. B, Condensed matter · 2000 · 89 citations

Photoluminescence, Engineering, Photocurrent Studies +11

Hole emission processes in InAs/GaAs self-assembled quantum dots

Wen‐Hao Chang, W. Y. Chen, T. M. Hsu et al. · Physical review. B, Condensed matter · 2002 · 86 citations

Electrical Engineering, Hole Emission Process, Engineering +9

Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing

T. M. Hsu, Yuemei Lan, Wen‐Hao Chang et al. · Applied Physics Letters · 2000 · 82 citations

Optical Materials, Engineering, Colloidal Nanocrystals +24