Ş. Kalem

Growth of InSb and InAs1−<i>x</i>Sb<i>x</i> on GaAs by molecular beam epitaxy

J.‐I. Chyi, Ş. Kalem, N. S. Kumar et al. · Applied Physics Letters · 1988 · 110 citations

Semiconductors, Materials Science, Electronic Devices +13

Infrared photoluminescence of InAs epilayers grown on GaAs and Si substrates

Robert D. Grober, H. D. Drew, Jen‐Inn Chyi et al. · Journal of Applied Physics · 1989 · 53 citations

Ii-vi Semiconductor, Electrical Engineering, Photoluminescence +13

Comparison of the top-down and bottom-up approach to fabricate nanowire-based silicon/germanium heterostructures

A. Wolfsteller, Nadine Geyer, Nguyen Duc Trung Kien et al. · Thin Solid Films · 2009 · 50 citations

Materials Science, Bottom-up Approach, Engineering +8

Possibility of fabricating light-emitting porous silicon from gas phase etchants

Ş. Kalem, Özgür Yavuzçetin · Optics Express · 2000 · 42 citations · Full text

Engineering, Nanoporous Material, Chemistry +17

Enhanced electron spin polarization in photoemission from thin GaAs

Takashi Maruyama, R. Prepost, E. L. Garwin et al. · Applied Physics Letters · 1989 · 37 citations

Categoryquantum Electronics, Optical Materials, Engineering +17