Concepedia

Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient

L. K. Bera, Shajan Mathew, N. Balasubramanian, G. Braithwaite, M. T. Currie, F. Singaporewala, Jee-Hoon Yap, R. Hammond, Anthony Lochtefeld, Mayank T. Bulsara,

Applied Surface Science · 2003 · 16 citations · 16 references

DOI

Concepts

References

16

Physics and applications of Ge<sub>x</sub>Si<sub>1-x</sub>/Si strained-layer heterostructures

R. People · IEEE Journal of Quantum Electronics · 1986 · 706 citations

, , +17

Carrier mobilities and process stability of strained Si <i>n</i>- and <i>p</i>-MOSFETs on SiGe virtual substrates

M. T. Currie, C. W. Leitz, T. A. Langdo et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 248 citations

, , +17

Strain dependence of the performance enhancement in strained-Si n-MOSFETs

J.J. Welser, Judy L. Hoyt, Shinichi Takagi et al. · 2002 · 160 citations

, , +14

Electron transport in strained Si layers on Si1−<i>x</i>Ge<i>x</i> substrates

Th. Vogelsang, K.R. Hofmann · Applied Physics Letters · 1993 · 151 citations

, , +17

Strained-Si heterostructure field effect transistors

C. K. Maiti, L. K. Bera, Sanatan Chattopadhyay · Semiconductor Science and Technology · 1998 · 133 citations

, , +17