Low-temperature mobility behaviour in submicron MOSFETs and related determination of channel length and series resistance

Physics of Semiconductor Devices

Samarth Jain, S. Radhakrishna · 1987 · 4.2K citations

Engineering, Electrical Engineering, Physics +12

Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces

Shiyu Sun, J.D. Plummer · IEEE Transactions on Electron Devices · 1980 · 684 citations

Engineering, Electrical Engineering, Materials Science +17

An empirical model for device degradation due to hot-carrier injection

Eiji Takeda, Norio Suzuki · IEEE Electron Device Letters · 1983 · 557 citations

Engineering, Electrical Engineering, Electronic Materials +16

A new method to determine MOSFET channel length

Jenn-Gang Chern, Po‐Han Chang, R.F. Motta et al. · IEEE Electron Device Letters · 1980 · 312 citations

Engineering, Electrical Engineering, Circuit Theory +8

Very small MOSFET's for low-temperature operation

F.H. Gaensslen, V.L. Rideout, E.J. Walker et al. · IEEE Transactions on Electron Devices · 1977 · 303 citations

Engineering, Electrical Engineering, Materials Science +13