Selective area growth of GaN/AlN heterostructures

Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

Yoshiki Kato, Shota Kitamura, Kazumasa Hiramatsu et al. · Journal of Crystal Growth · 1994 · 316 citations

Engineering, Materials Engineering, Materials Science +17

High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1997 · 253 citations

Engineering, Electrical Engineering, Materials Science +17

Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy

Shota Kitamura, Kazumasa Hiramatsu, Nobuhiko Sawaki Nobuhiko Sawaki · Japanese Journal of Applied Physics · 1995 · 181 citations

Engineering, Materials Engineering, Materials Science +17

Widegap Column‐ III Nitride Semiconductors for UV/Blue Light Emitting Devices

Isamu Akasaki, Hiroshi Amano · Journal of The Electrochemical Society · 1994 · 132 citations

Engineering, Materials Engineering, Materials Science +17

Analysis for dislocation density reduction in selective area grown GaAs films on Si substrates

Masafumi Yamaguchi, Masami Tachikawa, Mitsuru Sugo et al. · Applied Physics Letters · 1990 · 81 citations

Engineering, Materials Engineering, Materials Science +17