Y. Mihashi

Influence of oxygen on the threshold current of AlGaAs multiple quantum well lasers grown by metalorganic chemical vapor deposition

Y. Mihashi, M. Miyashita, N. Kaneno et al. · Journal of Crystal Growth · 1994 · 23 citations

Aluminium Nitride, Photonics, Engineering +6

Dark current and diffusion length in InGaAs photodiodes grown on GaAs substrates

E. Ishimura, Tadashi Kimura, Tetsuo Shiba et al. · Applied Physics Letters · 1990 · 18 citations · Full text

Wide-bandgap Semiconductor, Engineering, Diffusion Length +16

Long-Wavelength Receiver Optoelectronic Integrated Circuit on 3-Inch-Diameter GaAs Substrate Grown by InP-on-GaAs Heteroepitaxy

Y. Mihashi, K. Goto, E. Ishimura et al. · Japanese Journal of Applied Physics · 1994 · 18 citations

Wide-bandgap Semiconductor, Pd Layer, Optical Materials +17

Selective area growth of GaN/AlN heterostructures

D. Marx, Z. Kawazu, Takeshi Nakayama et al. · Journal of Crystal Growth · 1998 · 17 citations

Materials Science, Materials Engineering, Engineering +4

Analysis of the in-plane bandgap distribution in selectively grown InGaAs/InGaAsP multiple quantum well by low pressure metalorganic chemical vapor deposition

T. Itagaki, Tadashi Kimura, K. Goto et al. · Journal of Crystal Growth · 1994 · 15 citations

Engineering, Physics, Applied Physics +5