Influence of oxygen on the threshold current of AlGaAs multiple quantum well lasers grown by metalorganic chemical vapor deposition

Heterostructure Lasers

H. C. Casey, M. B. Panish, T. A. Roth · Journal of The Electrochemical Society · 1979 · 1.7K citations

Engineering, Electrical Engineering, Materials Science +17

Effects of oxygen and water vapour introduction during MOCVD growth of GaAlAs

H. Terao, Hironori Sunakawa · Journal of Crystal Growth · 1984 · 89 citations

Engineering, Materials Engineering, Materials Science +14

Minority carrier lifetime and luminescence in MOVPE-grown (Al,Ga)As epilayers and DH lasers

G. W. ’t Hooft, C. van Opdorp, Hendrik Veenvliet et al. · Journal of Crystal Growth · 1981 · 78 citations

Engineering, Materials Engineering, Materials Science +14

Graded barrier single quantum well lasers - Theory and experiment

D. Kasemset, Chi-Shain Hong, Navin B. Patel et al. · IEEE Journal of Quantum Electronics · 1983 · 69 citations

Engineering, Electrical Engineering, Physics +17

The influence of bulk nonradiative recombination in the wide band-gap regions of molecular beam epitaxially grown GaAs-Al<i>x</i>Ga1−<i>x</i>As DH lasers

W. T. Tsang · Applied Physics Letters · 1978 · 66 citations

Engineering, Electrical Engineering, Materials Science +17