Minority carrier lifetime and luminescence in MOVPE-grown (Al,Ga)As epilayers and DH lasers

Concentration-dependent absorption and spontaneous emission of heavily doped GaAs

H. C. Casey, Frank Stern · Journal of Applied Physics · 1976 · 559 citations

Engineering, Electrical Engineering, Materials Science +17

Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction band

D. M. Eagles · Journal of Physics and Chemistry of Solids · 1960 · 329 citations

Engineering, Materials Engineering, Materials Science +17

Minority-carrier lifetimes and internal quantum efficiency of surface-free GaAs

R. J. Nelson, R. G. Sobers · Journal of Applied Physics · 1978 · 297 citations

Engineering, Materials Engineering, Materials Science +17

Calculated spectral dependence of gain in excited GaAs

Frank Stern · Journal of Applied Physics · 1976 · 287 citations

Engineering, Electrical Engineering, Optoelectronics +15

Self-absorption effects on the radiative lifetime in GaAs-GaAlAs double heterostructures

P.M. Asbeck · Journal of Applied Physics · 1977 · 253 citations

Engineering, Electrical Engineering, Materials Science +17