C. van Opdorp - Concepedia

Author

C. van Opdorp

Philips (Netherlands)

Also Known As

C. Van Opdorp, C. van Opdorp

Publications

923

Citations

H-Index

Concepts

All Affiliations

Philips (Netherlands)Philips (United States)NXP (Netherlands)Philips (Finland)

About

C. van Opdorp is an author at Philips (Netherlands) specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	23	882
2	Applied Physics	15	20	835
3	Electrical Engineering	10	10	484
4	Natural Sciences	1	1	64
5	Materials Engineering	1	1	11

C. van Opdorp

Publications

882

Citations

H-Index

Page 1

	Year	Citations
Method for determining effective nonradiative lifetime and leakage losses in double-heterostructure lasers C. van Opdorp, G. W. ’t Hooft Journal of Applied Physics Optical PumpingPhotonicsPhotoluminescenceEngineeringLaser Science	1981	97
Current-voltage characteristics and capacitance of isotype heterojunctions C. van Opdorp, Heikki Kanerva Solid-State Electronics Device ModelingElectrical EngineeringEngineeringElectronic EngineeringIsotype Heterojunctions	1967	86
Minority carrier lifetime and luminescence in MOVPE-grown (Al,Ga)As epilayers and DH lasers G. W. ’t Hooft, C. van Opdorp, Hendrik Veenvliet, Journal of Crystal Growth Materials SciencePhotoluminescenceEngineeringApplied PhysicsMinority Carrier Lifetime	1981	78
Growth of multiple thin layer structures in the GaAs-AlAs system using a novel VPE reactor Maarten Leys, C. van Opdorp, M. P. A. Viegers, Journal of Crystal Growth Electrical EngineeringEpitaxial GrowthEngineeringApplied PhysicsNovel Vpe Reactor	1984	71
Evaluation of doping profiles from capacitance measurements C. van Opdorp Solid-State Electronics Device ModelingElectrical EngineeringEngineeringCapacitance MeasurementsNanoelectronics	1968	67
Determination of bulk minority-carrier lifetime and surface/interface recombination velocity from photoluminescence decay of a semi-infinite semiconductor slab G. W. ’t Hooft, C. van Opdorp Journal of Applied Physics Electrical EngineeringPhotoluminescenceDelta Function LightEngineeringPhysics	1986	66
Evaluation of diffusion length and surface-recombination velocity from a planar-collector-geometry electron-beam-induced current scan H. K. Kuiken, C. van Opdorp Journal of Applied Physics Large SamplesEngineeringNuclear PhysicsDiffusion LengthElectron-beam Lithography	1985	64
Temperature dependence of interface recombination and radiative recombination in (Al, Ga)As heterostructures G. W. ’t Hooft, C. van Opdorp Applied Physics Letters Materials ScienceSemiconductorsRadiative RecombinationAluminium NitrideEngineering	1983	58
Use of Schottky-diode collectors for SEM determination of bulk diffusion lengths C. van Opdorp, Richard Peters, M.V.D.S. de Klerk Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringCross SectionsPhysics	1974	49
Avalanche Breakdown in Epitaxial SiC <i>p-n</i> Junctions C. van Opdorp, J. Vrakking Journal of Applied Physics Semiconductor TechnologyElectrical EngineeringReverse Current-voltage CharacteristicsEngineeringPhysics	1969	32

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