Threshold Current Reduction is a performance optimization strategy in semiconductor laser physics that specifically denotes the minimization of the minimum injection current required to initiate lasing in quantum well devices by enhancing carrier confinement and radiative efficiency through structural and material engineering.
782
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27.5K
Citations
3K
Authors
520
Institutions
Publications per year
2017–2026
99
Parents
Publications
782
1–5 of 782
Authors
3K
- KI
15
h-index
- FK
13
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- SPSteven P. DenBaars
University of California, Santa Barbara, United States
10 publications · 340 citations
10
h-index
- SA
10
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- MH
9
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1–5 of 3K
Institutions
520
University of California, Santa Barbara
Santa Barbara, United States
21 h-index
172 publications
7.1K citations
Tokyo Institute of Technology
Tokyo, Japan
17 h-index
153 publications
6.4K citations
University of Sheffield
Sheffield, United Kingdom
15 h-index
83 publications
3.4K citations
Hitachi (Japan)
Tokyo, Japan
15 h-index
80 publications
2.4K citations
Chinese Academy of Sciences
Beijing, China
15 h-index
166 publications
4.4K citations
AT&T (United States)
Bedminster, United States
14 h-index
87 publications
2.7K citations
Institute of Semiconductors
Beijing, China
14 h-index
131 publications
2.2K citations
University of Illinois Urbana-Champaign
Urbana, United States
13 h-index
61 publications
1.3K citations
1–8 of 520
Venues
- Applied Physics Letters
166 publications · 6.4K citations
48
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- IEEE Journal of Quantum Electronics
62 publications · 2.9K citations
29
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- Electronics Letters
92 publications · 3.5K citations
28
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- IEEE Photonics Technology Letters
IPTEL · 62 publications · 2K citations
26
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- Japanese Journal of Applied Physics
JJAP · 54 publications · 1.7K citations
22
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