Tatsuo Ozeki

Characteristics of 4H–SiC MOS interface annealed in N2O

Keiko Fujihira, Yoichiro Tarui, Masayuki Imaizumi et al. · Solid-State Electronics · 2005 · 78 citations

Engineering, Materials Engineering, Materials Science +12

Highly resistive GaN layers formed by ion implantation of Zn along the <i>c</i> axis

Toshiyuki Oishi, Naruhisa Miura, Muneyoshi Suita et al. · Journal of Applied Physics · 2003 · 49 citations

Engineering, Materials Engineering, Materials Science +17

Low-cost 320x240 uncooled IRFPA using a conventional silicon IC process

Tomohiro Ishikawa, Masashi Ueno, Kazuyo Endo et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1999 · 30 citations

Engineering, Electrical Engineering, Materials Science +17

Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate

Takuma Nanjo, Naruhisa Miura, Toshiyuki Oishi et al. · Japanese Journal of Applied Physics · 2004 · 27 citations

Engineering, Electrical Engineering, Materials Science +17

Selective area growth of GaN/AlN heterostructures

D. Marx, Z. Kawazu, Takeshi Nakayama et al. · Journal of Crystal Growth · 1998 · 17 citations

Engineering, Materials Engineering, Materials Science +14