Naruhisa Miura

4H-SiC Trench MOSFET with Bottom Oxide Protection

Yasuhiro Kagawa, Nobuo Fujiwara, Katsutoshi Sugawara et al. · Materials science forum · 2014 · 104 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +12

Single-electron charging effects in Nb/Nb oxide-based single-electron transistors at room temperature

Jun‐ichi Shirakashi, Kazuhiko Matsumoto, Naruhisa Miura et al. · Applied Physics Letters · 1998 · 101 citations

Engineering, Electrical Engineering, Materials Science +16

Characteristics of 600, 1200, and 3300 V Planar SiC-MOSFETs for Energy Conversion Applications

Masayuki Imaizumi, Naruhisa Miura · IEEE Transactions on Electron Devices · 2014 · 93 citations

Engineering, Electrical Engineering, Materials Science +17

Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial $\hbox{SiO}_{2}$ Layer Between $\hbox{Al}_{2}\hbox{O}_{3}$ and SiC

Tomohiro Hatayama, Shiro Hino, Naruhisa Miura et al. · IEEE Transactions on Electron Devices · 2008 · 69 citations

Engineering, Electrical Engineering, Materials Science +15

Electron-beam-induced deposition of carbonaceous microstructures using scanning electron microscopy

Naruhisa Miura, Hideaki Ishii, Jun‐ichi Shirakashi et al. · Applied Surface Science · 1997 · 64 citations

Natural Sciences, Materials Engineering, Materials Science +11