Concepedia

Tomohiro Hatayama

TH

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Publications

2

Citations

85

H-Index

2

Active since

2007

Affiliations

Tokyo Institute of Technology(Current)

Tomohiro Hatayama is an author at Tokyo Institute of Technology specializing in oxide semiconductors, semiconductor device materials, and electrical engineering.

Publications per year

2007–2008

2

Publications

2

Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial $\hbox{SiO}_{2}$ Layer Between $\hbox{Al}_{2}\hbox{O}_{3}$ and SiC

Tomohiro Hatayama, Shiro Hino, Naruhisa Miura et al. · IEEE Transactions on Electron Devices · 2008 · 69 citations

, , +15

Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al<sub>2</sub>O<sub>3</sub> Gate Insulator

Shiro Hino, Tomohiro Hatayama, Naruhisa Miura et al. · Materials science forum · 2007 · 16 citations · Full text

, , +17

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