Katsutoshi Sugawara

4H-SiC Trench MOSFET with Bottom Oxide Protection

Yasuhiro Kagawa, Nobuo Fujiwara, Katsutoshi Sugawara et al. · Materials science forum · 2014 · 98 citations

Electrical Engineering, Engineering, Switching Loss +10

Characteristics of c-axis oriented large grain ZnO films prepared by low-pressure MO-CVD method

Y. Kashiwaba, Katsutoshi Sugawara, K. Haga et al. · Thin Solid Films · 2002 · 50 citations

Materials Engineering, Materials Science, Low-pressure Mo-cvd Method +7

Impact of grounding the bottom oxide protection layer on the short-circuit ruggedness of 4H-SiC trench MOSFETs

Rina Tanaka, Yasuhiro Kagawa, Nobuo Fujiwara et al. · 2014 · 40 citations

Electrical Engineering, 4H-sic Trench Mosfets, Engineering +12

Luminescence and scintillation properties of Ce-doped Cs2ZnCl4 crystals

Katsutoshi Sugawara, Masanori Koshimizu, Takayuki Yanagida et al. · Optical Materials · 2014 · 29 citations

Engineering, Optical Properties, Scintillator +4

Raman scattering study of phonons in KCuF3

Takuya Ueda, Katsutoshi Sugawara, T. Kondo et al. · Solid State Communications · 1991 · 17 citations

Physics, Natural Sciences, Spectroscopy +3