Keiko Fujihira

Characteristics of 4H–SiC MOS interface annealed in N2O

Keiko Fujihira, Yoichiro Tarui, Masayuki Imaizumi et al. · Solid-State Electronics · 2005 · 76 citations

Oxide Heterostructures, Semiconductor Technology, Electrical Engineering +5

High-purity and high-quality 4H–SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition

Keiko Fujihira, Tsunenobu Kimoto, H. Matsunami · Applied Physics Letters · 2002 · 53 citations

Engineering, Semiconductors, High-quality 4H–sic +16

Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode

Keiko Fujihira, Shinichi Tamura, Tsunenobu Kimoto et al. · IEEE Transactions on Electron Devices · 2002 · 44 citations

Electrical Engineering, Engineering, Power Device +9

Growth and characterization of 4H–SiC in vertical hot-wall chemical vapor deposition

Keiko Fujihira, Tsunenobu Kimoto, H. Matsunami · Journal of Crystal Growth · 2003 · 38 citations

Materials Engineering, Materials Science, Engineering +4

Successful Development of 1.2 kV 4H-SiC MOSFETs with the Very Low On-Resistance of 5 mΩcm2

Natsuko Miura, Keiko Fujihira, Yukiyasu Nakao et al. · 2006 · 37 citations

Engineering, Very Low On-resistance, Power Electronics +16