Yukiyasu Nakao - Concepedia

Author

Yukiyasu Nakao

Mitsubishi Electric (Japan)

Also Known As

Y. Nakao, Yukiyasu NAKAO, Yukiyasu Nakao

Publications

327

Citations

H-Index

Concepts

All Affiliations

Mitsubishi Electric (Japan)Mitsubishi Electric (United States)

About

Yukiyasu Nakao is an author at Mitsubishi Electric (Japan) specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	287
2	Electrical Engineering	10	10	265
3	Applied Physics	6	6	143
4	Natural Sciences	1	1	22
5	Chemistry	1	1	22

Yukiyasu Nakao

Publications

287

Citations

H-Index

Page 1

	Year	Citations
6.5 kV schottky-barrier-diode-embedded SiC-MOSFET for compact full-unipolar module Koutarou Kawahara, Shiro Hino, Koji Sadamatsu, Electrical EngineeringEngineeringPower DeviceNanoelectronicsCompact Full-unipolar Module	2017	71
Successful Development of 1.2 kV 4H-SiC MOSFETs with the Very Low On-Resistance of 5 mΩcm2 Natsuko Miura, Keiko Fujihira, Yukiyasu Nakao, EngineeringVery Low On-resistancePower ElectronicsSemiconductor Device4H-sic Mosfets	2006	37
Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs Koutarou Kawahara, Shiro Hino, Koji Sadamatsu, Materials science forum Sic MosfetElectrical EngineeringEngineeringKv Sic MosfetsHigh Voltage Engineering	2018	29
Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode S. Yamamoto, Yukiyasu Nakao, Nobuyuki Tomita, Materials science forum Electrical EngineeringBody DiodeEngineeringForward Voltage DegradationPower Device	2014	26
Orbital interactions in sizable systems. Chemical bondings and regioselectivities in C60—transition metal complexes Hiroshi Fujimoto, Yukiyasu Nakao, Kenichi Fukui Journal of Molecular Structure Orbital InteractionsInorganic ChemistryEngineeringPhysicsNatural Sciences	1993	22
Effect of Stacking Faults in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes Kazuya Konishi, Shuhei Nakata, Yoshiyuki Nakaki, Japanese Journal of Applied Physics Defect ToleranceElectrical EngineeringEngineeringNanoelectronicsStress-induced Leakage Current	2013	20
Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body Keiko Fujihira, Naruhisa Miura, T. Watanabe, Materials science forum Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringSmaller Ron	2007	18
TDDB Measurement of Gate SiO<sub>2</sub> on 4H-SiC Formed by Chemical Vapor Deposition Keiko Fujihira, Shohei Yoshida, Naruhisa Miura, Materials science forum Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringHardware Reliability	2008	17
Low on-resistance 1.2 kV 4H-SiC MOSFETs integrated with current sensor Akihiko Furukawa, S. Kinouchi, Hiroshi Nakatake, Electrical Engineering4H-sic MosfetsEngineeringSemiconductor DeviceHigh Voltage Engineering	2011	17
Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs Yukiyasu Nakao, Shoyu Watanabe, Naruhisa Miura, Materials science forum Electrical EngineeringSemiconductor DeviceEngineeringHigh Voltage EngineeringPower Device	2008	16

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