Concepedia

Masami Tachikawa

MT

Statistics

Publications

17

Citations

1.4K

H-Index

15

Active since

1984

Affiliations

NTT (Japan)(Current)

Tokyo Institute of Technology

Hokkaido University

Masami Tachikawa is an author at NTT (Japan) specializing in engineering, applied physics, and electrical engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringMaterial ScienceSemiconductorsCondensed Matter PhysicsPhysicsOptoelectronicsMicroelectronicsCrystalline Defects

Publications per year

1984–2008

17

Publications

17

Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System

M. Mizuta, Masami Tachikawa, Hiroshi Kukimoto et al. · Japanese Journal of Applied Physics · 1985 · 295 citations

Materials Science, Deep Dx Center, Electrical Engineering +15

Defect reduction effects in GaAs on Si substrates by thermal annealing

Masafumi Yamaguchi, Akio Yamamoto, Masami Tachikawa et al. · Applied Physics Letters · 1988 · 194 citations

Engineering, Thermal Annealing, Semiconductor Device +20

Dislocation generation of GaAs on Si in the cooling stage

Masami Tachikawa, Hidefumi Mori · Applied Physics Letters · 1990 · 122 citations

Semiconductors, Hcl-gacl Vapor Phase, Electrical Engineering +12

A Simple Calculation of the DX Center Concentration Based on an L-Donor Model

Masami Tachikawa, M. Mizuta, Hiroshi Kukimoto et al. · Japanese Journal of Applied Physics · 1985 · 104 citations

Aluminium Nitride, Engineering, Dx Center Concentration +17

Film thickness dependence of dislocation density reduction in GaAs-on-Si substrates

Masami Tachikawa, Masafumi Yamaguchi · Applied Physics Letters · 1990 · 97 citations

Engineering, Semiconductor Device, Semiconductors +16

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