A Simple Calculation of the DX Center Concentration Based on an L-Donor Model

Abstract

The DX center concentration in Al x Ga 1- x As which depends on composition and hydrostatic pressure has been calculated, based on a model wherein the donor level which is associated with the L conduction band forms the DX center. The calculation shows good agreement with the results of observation. The present model can be applied to a similar center observed in GaPAs. The possibility of DX center formation in other III-III'-V and III-V-V' ternary alloy systems has also been pointed out.