Monolithic integration of complementary HBTs by selective MOVPE

Abstract

The monolithic integration of n-p-n and p-n-p heterojunction bipolar transistors (HBTs) through the use of selective metal organic vapor phase epitaxial regrowth is discussed. This was accomplished by masking, patterning, and etching a p-n-p HBT wafer and then selectively regrowing an n-p-n structure in the etched areas. The selective epitaxial regrowth did not degrade the current gain of the p-n-p structure. Several complementary amplifier circuits were fabricated and tested successfully, demonstrating the feasibility of a monolithic complementary HBT technology.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>